Volume 13, Issue 33 p. 9164-9176
Concept

Chemistry of Organometallic Compounds on Silicon: The First Step in Film Growth

Juan Carlos F. Rodríguez-Reyes

Juan Carlos F. Rodríguez-Reyes

Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA, Fax: (+1) 302-831-6335

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Andrew V. Teplyakov Prof.

Andrew V. Teplyakov Prof.

Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA, Fax: (+1) 302-831-6335

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First published: 08 November 2007
Citations: 27

Graphical Abstract

Silicon surface chemistry is facing a new challenge: Mechanistic control of surface reactions with a variety of organometallic compounds is necessary to ensure the future of microelectronics. This paper outlines previous investigations, both experimental and theoretical, that pursue this molecular-level control of surface reactions (see scheme), and offers possible directions for future studies.

Abstract

The continuous decrease in size of electronic devices has reached a critical point at which the molecular-level understanding of chemical processes is imperative. Metal-containing films, an important part of every circuit, are currently deposited from a myriad of organometallic compounds, in order to control the first stages of film growth and ultimately produce an atomically defined interface. This article outlines recent molecular-level investigations on reactions of organometallic compounds with silicon surfaces. The role of surface structure and chemical state is placed in a framework of future challenges and opportunities for applications in electronics.